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2SK2796(L), 2SK2796(S)
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1034-0500 (Previous: ADE-208-534C) Rev.5.00 Sep 07, 2005
Features
* Low on-resistance RDS(on) = 0.12 typ. * 4 V gate drive devices. * High speed switching
Outline
RENESAS Package code: PRSS0004ZD-A (Package name: DPAK(L)-(1))
4
RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(S))
4 G 1 2 3 D 1. Gate 2. Drain 3. Source 4. Drain
1
23
S
Rev.5.00 Sep 07, 2005 page 1 of 8
2SK2796(L), 2SK2796(S)
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note3 EAR Note3 Pch Note2 Tch Tstg Ratings 60 20 5 20 5 5 2.14 20 150 -55 to +150 Unit V V A A A A mJ W
C C
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 4. Pulse test Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 60 20 -- -- 1.0 -- -- 2.5 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.12 0.16 4.0 180 90 30 9 25 35 55 1.0 40 Max -- -- 10 10 2.0 0.16 0.25 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VDS = 60 V, VGS = 0 VGS = 16 V, VDS = 0 ID = 1 mA, VDS = 10 V ID = 3 A, VGS = 10 V Note4 ID = 3 A, VGS = 4 V Note4 ID = 3 A, VDS = 10 V Note4 VDS = 10V, VGS = 0, f = 1MHz VGS = 10 V, ID = 3 A, RL = 10
IF = 5A, VGS = 0 IF = 5A, VGS = 0 diF/ dt =50 A/ s
Rev.5.00 Sep 07, 2005 page 2 of 8
2SK2796(L), 2SK2796(S)
Main Characteristics
Power vs. Temperature Derating
40 100 30 10 3 1 0.3
PW
C D O
Maximum Safe Operation Area
Channel Dissipation Pch (W)
10
10
1
= 10 m s
30
Drain Current ID (A)
s
0
m
(1
s
s
20
10
Operation in this area is limited by RDS(on)
pe t ra
sh
n io
ot
)
c (T =
25 ) C
0
50
100
150
200
Ta = 25C 0.1 0.2 0.5 1 2
5
10 20
50 100
Case Temperature TC (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
5 10 V 6 V 5V 4V 3.5 V Pulse Test 5
Typical Transfer Characteristics
25C -25C
Drain Current ID (A)
Drain Current ID (A)
4
4
Tc = 75C
3V 3
3
2 2.5 V 1
VGS = 2 V
2
1
VDS = 10 V Pulse Test
0
2
4
6
8
10
0
2
4
6
8
10
Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage
Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current
5 Pulse Test 2 1 0.5
VGS = 4 V
Drain to Source Saturation Voltage VDS (on) (V)
2.0
Pulse Test
1.6
1.2
0.8
ID = 5 A 2A 1A 2 4 6 8 10
Static Drain to Source on State Resistance RDS (on) ()
0.2 0.1 0.05 0.1
0.4
10 V 0.3 1 3 10 30 100
0
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.5.00 Sep 07, 2005 page 3 of 8
2SK2796(L), 2SK2796(S)
Static Drain to Source on State Resistance vs. Temperature
Forward Transfer Admittance yfs (S)
0.5 Pulse Test 0.4 2A 0.3
VGS = 4 V
Static Drain to Source on State Resistance RDS (on) ()
Forward Transfer Admittance vs. Drain Current
10 Tc = -25C 5 2 1 0.5 75C 25C
1A ID = 5 A
0.2 5A 0.1 10 V 0 -40 0 40 80 120 160 1, 2 A
0.2 0.1 0.1
VDS = 10 V Pulse Test
0.2
0.5
1
2
5
10
Case Temperature TC (C) Body to Drain Diode Reverse Recovery Time
500 1000 500
Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage
VGS = 0 f = 1 MHz
Reverse Recovery Time trr (ns)
Capacitance C (pF)
200 100 50 20 10 5 0.1 di / dt = 50 A / s VGS = 0, Ta = 25C 0.2 0.5 1 2 5 10
200 100 50
Ciss
Coss
20 Crss 10 0 10 20 30 40 50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V)
100 ID = 5 A
VDD = 10 V 25 V 50 V VDS VGS
Switching Characteristics
20 100 50 20 10 5
td(off) tf
Switching Time t (ns)
80
16
tr td(on)
60
12
40
8
20
VDD = 50 V 25 V 10 V
4 0 10
2 1 0.1 0.2
VGS = 10 V, VDD = 30 V PW = 5 s, duty < 1 %
0
2
4
6
8
0.5
1
2
5
10
Gate Charge Qg (nc)
Drain Current ID (A)
Rev.5.00 Sep 07, 2005 page 4 of 8
2SK2796(L), 2SK2796(S)
Reverse Drain Current vs. Source to Drain Voltage Maximum Avalanche Energy vs. Channel Temperature Derating
(A)
10
Repetitive Avalanche Energy EAR (mJ)
2.5
IAP = 5 A VDD = 25 V duty < 0.1 % Rg > 50
Reverse Drain Current IDR
8
5V
2.0
6
10 V V GS = 0, -5 V
1.5
4
1.0
2 Pulse Test 0 0.4 0.8 1.2 1.6 2.0
0.5 0 25
50
75
100
125
150
Source to Drain Voltage
VSD (V)
Channel Temperature Tch (C)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance s (t)
3 Tc = 25C 1 D=1 0.5 0.3
0.2
0.1 0.05
0.02
1
0.1
ch - c(t) = s (t) * ch - c ch - c = 6.25C/W, Tc = 25C
uls e
PDM PW T
0.03
0.0
1s
h
P ot
D=
PW T
0.01 10
100
1m
10 m
100 m
1
10
Pulse Width Avalanche Test Circuit
VDS Monitor L IAP Monitor
PW (S) Avalanche Waveform
EAR = 1 2 * L * IAP2 * VDSS VDSS - VDD V(BR)DSS IAP
Rg
D. U. T
VDD ID
VDS
Vin 15 V
50 0 VDD
Rev.5.00 Sep 07, 2005 page 5 of 8
2SK2796(L), 2SK2796(S)
Switching Time Test Circuit
Vin Monitor D.U.T. RL VDD = 30 V Vin Vout Vin 10 V 50 Vout Monitor 10% 10% 10%
Switching Time Waveforms
90%
90% td(on) tr
90% td(off) tf
Rev.5.00 Sep 07, 2005 page 6 of 8
2SK2796(L), 2SK2796(S)
Package Dimensions
JEITA Package Code
RENESAS Code
PRSS0004ZD-A
Package Name DPAK(L)-(1) / DPAK(L)-(1)V
MASS[Typ.] 0.42g
Unit: mm
6.5 0.5 5.4 0.5
1.7 0.5
2.3 0.2 0.55 0.1
5.5 0.5
1.2 0.3
3.1 0.5
1.15 0.1 0.8 0.1
16.2 0.5
2.29 0.5
2.29 0.5
0.55 0.1
JEITA Package Code
SC-63
RENESAS Code
PRSS0004ZD-C
Package Name DPAK(S) / DPAK(S)V
MASS[Typ.] 0.28g
Unit: mm
1.5 0.5
6.5 0.5 5.4 0.5
(0.1) (0.1)
2.3 0.2 0.55 0.1
(5.1)
5.5 0.5
1.2 Max
0 - 0.25
(1.2)
2.5 0.5
1.0 Max. 2.29 0.5
0.8 0.1 2.29 0.5
0.55 0.1
Rev.5.00 Sep 07, 2005 page 7 of 8
(5.1)
2SK2796(L), 2SK2796(S)
Ordering Information
Part Name 2SK2796L-E 2SK2796STL-E Quantity 3200 pcs 3000 pcs Box (Sack) Taping Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.5.00 Sep 07, 2005 page 8 of 8
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0

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